The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 11, 2005
Filed:
Jan. 23, 2004
Masahiro Yoshida, Tokyo, JP;
Shunichi Tokitoh, Tokyo, JP;
Masahiro Yoshida, Tokyo, JP;
Shunichi Tokitoh, Tokyo, JP;
Oki Electric Industry Co., Ltd., Tokyo, JP;
Abstract
A method of manufacturing a semiconductor device includes providing a semiconductor substrate, and then forming a gate insulating layer on the semiconductor substrate. A lower gate electrode layer and a cap gate layer are formed on the gate insulating layer. The lower gate electrode layer and the cap gate layer are patterned to form a gate electrode structure. An LDD region is formed on the semiconductor substrate. An oxide layer is formed on the gate electrode structure and the semiconductor substrate. A thickness of the oxide layer is greater than a thickness of the gate insulating layer. Next, a nitride layer is formed on the oxide layer. Finally, the oxide layer and the nitride layer are etched to form a nitride sidewall spacer on the gate electrode structure through the oxide layer.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile