The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 04, 2005
Filed:
Mar. 03, 2003
Kyu-mann Lee, Suwon, KR;
Hyun-jo Kim, Hwasung, KR;
Jeong-hee Park, Gwangmyeong, KR;
Tae-wan Kim, Euwang, KR;
I-hun Song, Seongnam, KR;
Seok-jae Chung, Seongnam, KR;
Kyu-Mann Lee, Suwon, KR;
Hyun-Jo Kim, Hwasung, KR;
Jeong-Hee Park, Gwangmyeong, KR;
Tae-Wan Kim, Euwang, KR;
I-Hun Song, Seongnam, KR;
Seok-Jae Chung, Seongnam, KR;
Samsung Electronics Co., Ltd., Kyungki-do, KR;
Abstract
A method for forming an MTJ structure suitable for use in a MRAM device having a bottom electrode including a layer of platinum, ruthenium, iridium, rhodium, osmium, palladium or their oxides and having reduced surface roughness to improve the hysteresis loop characteristics of the resulting MTJ structure. The bottom electrode layer may also combine the functions of both the seeding layer and bottom electrode of the conventional two-layer structure, thereby simplifying the manufacturing process.