The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 04, 2005
Filed:
Sep. 04, 2003
Applicants:
Vladislav Vashchenko, Palo Alto, CA (US);
Ann Concannon, San Jose, CA (US);
Peter J. Hopper, San Jose, CA (US);
Marcel Ter Beek, Pleasanton, CA (US);
Inventors:
Vladislav Vashchenko, Palo Alto, CA (US);
Ann Concannon, San Jose, CA (US);
Peter J. Hopper, San Jose, CA (US);
Marcel ter Beek, Pleasanton, CA (US);
Assignee:
National Semiconductor Corporation, Santa Clara, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L029/76 ;
U.S. Cl.
CPC ...
Abstract
In a self protection I/O, a multiple gate NMOS structure is designed to shift the avalanche multiplication region away from the edge of the gate nearest the drain. This is achieved by providing a lightly doped region between the edge of the gate and the ballast region of the drain.