The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 04, 2005

Filed:

Feb. 13, 2003
Applicants:

John Adam Edmond, Cary, NC (US);

Kathleen Marie Doverspike, Apex, NC (US);

Hua-shuang Kong, Raleigh, NC (US);

Michael John Bergmann, Durham, NC (US);

Inventors:

John Adam Edmond, Cary, NC (US);

Kathleen Marie Doverspike, Apex, NC (US);

Hua-Shuang Kong, Raleigh, NC (US);

Michael John Bergmann, Durham, NC (US);

Assignee:

Cree, Inc., Durham, NC (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L033/00 ;
U.S. Cl.
CPC ...
Abstract

A semiconductor structure for light emitting devices includes a Group III nitride active layer positioned between a silicon carbide cladding layer and a Group III nitride cladding layer, wherein the silicon carbide cladding layer and the Group III nitride cladding layer have opposite conductivity types. Moreover, the silicon carbide cladding layer and the Group III nitride cladding layer have respective bandgaps that are larger than the bandgap of the active layer.


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