The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 04, 2005
Filed:
Dec. 24, 2003
Min-yong Lee, Ichon-shi, KR;
Hoon-jung OH, Ichon-shi, KR;
Jong-min Lee, Ichon-shi, KR;
Hynix Semiconductor Inc., Ichon-shi, KR;
Abstract
The present invention relates to a method for fabricating a capacitor of a semiconductor device. The method includes the steps of: forming a storage node oxide layer having a hole for forming a storage node on a substrate; forming a silicon layer on the storage node oxide layer having the hole; forming a photoresist on the silicon layer such that the photoresist fills the hole; forming a storage node having a cylinder shape inside of the hole by removing the silicon layer disposed on an upper surface of the storage node oxide layer; ion-implanting an impurity onto head portions of the storage node under a state that the photoresist remains; removing the photoresist; and growing metastable-polysilicon (MPS) grains on inner walls of the storage node.