The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 04, 2005
Filed:
Nov. 06, 2001
Hans-dieter Block, Leverkusen, DE;
Udo Kräuter, Leverkusen, DE;
Peter Schreckenberg, Bremen, DE;
SolarWorld Aktiengesellschaft, Bonn, DE;
Abstract
The invention relates to a method and a device for producing globular grains of high-purity silicon by atomising a silicon melt () in an ultrasonic field (). Globular grains having a grain size of 50 μm can be produced by means of said method and device and can be used to separate high-purity silicon from silane in the fluid bed. The silicon melt () is fed into the ultrasonic field () at a distance of <50 mm in relation to a field node, and the atomised silicon leaves the ultrasonic field () at a temperature close to the liquidus point. The invention also relates to a use of the product produced according to the inventive method or using the inventive device, as particles for producing high-purity silicon from silane in a fluid bed.