The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 04, 2005
Filed:
Mar. 27, 2003
Katsumi Nakagawa, Kyoto, JP;
Shunichi Ishihara, Kyoto, JP;
Hiroshi Sato, Nara, JP;
Shoji Nishida, Nara, JP;
Yasuyoshi Takai, Nara, JP;
Katsumi Nakagawa, Kyoto, JP;
Shunichi Ishihara, Kyoto, JP;
Hiroshi Sato, Nara, JP;
Shoji Nishida, Nara, JP;
Yasuyoshi Takai, Nara, JP;
Canon Kabushiki Kaisha, Tokyo, JP;
Abstract
A liquid-phase growth method for immersing a polycrystalline substrate in a melt in a crucible wherein crystal ingredients are dissolved, thereby growing poly crystals upon the substrate, comprises a first step for growing poly crystals to a predetermined thickness, and a second step for melting back a part of the poly crystals grown in the first step in the melt, wherein the relative position between the substrate and melt is changed between the first step and second step, bringing melt with different temperature into contact with the polycrystalline surface. The obtained poly crystals have properties rivaling those of poly crystals used in conventional solar cells but with little risk of trouble such as line breakage of grid electrodes in application to solar cells, and can be obtained in great quantities at low costs.