The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 27, 2005
Filed:
Jul. 25, 2003
Cheng Bing Liu, Houston, TX (US);
Qiming LI, Sugar Land, TX (US);
Frank P. Shray, Sugar Land, TX (US);
Jacques Tabanou, Houston, TX (US);
Cheng Bing Liu, Houston, TX (US);
Qiming Li, Sugar Land, TX (US);
Frank P. Shray, Sugar Land, TX (US);
Jacques Tabanou, Houston, TX (US);
Schlumberger Technology Corporation, Sugar Land, TX (US);
Abstract
Techniques for determining a formation property by simplifying various two-geological-layer or multi-geological-layer models into a multi-electrical-layer model. A volume fraction of a layer in a multi-electrical-layer model is determined for an anisotropic region (sliding window) of the formation. The multi-electrical-layer electrical model includes a relative-lower-resistivity layer and a relative-higher-resistivity layer. A high-resolution resistivity measurement is used in the determination and resistivities for the relative-lower-resistivity layer and for the relative-higher-resistivity layer based on the volume fraction and bulk resistivity measure ments of the anisotropic region are determined. The formation property is based on the volume fraction, the resistivity of the relative-lower-resistivity layer, the resistivity of the relative-higher-resistivity layer, a total porosity of the anisotropic region, and bulk resistivity measurements of the region.