The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 27, 2005
Filed:
Sep. 24, 2002
Applicants:
Reinhard Losehand, München, DE;
Hubert Werthmann, München, DE;
Inventors:
Reinhard Losehand, München, DE;
Hubert Werthmann, München, DE;
Assignee:
Infineon Technologies AG, Munich, DE;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L031/075 ; H01L029/00 ; H01L021/8238 ; H01L021/20 ;
U.S. Cl.
CPC ...
Abstract
A semiconductor structure for high frequency operation has a substrate with a doped well formed therein and a buffer layer made of a substrate material covers the well. The buffer layer is made of an undoped material and is disposed on a top side of the well for inhibiting an outdiffusion of a dopant from the well. At least a portion of the substrate is not covered by the buffer layer.
Losehand, Reinhard. (2005). Method for manufacturing a high frequency semiconductor structure and high frequency semiconductor structure (U.S. Patent No. 6949812). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6949812
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile