The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 27, 2005
Filed:
Oct. 30, 2002
Takahiro Takimoto, Tenri, JP;
Isamu Ohkubo, Kashiba, JP;
Masaru Kubo, Kitakatsuragi-gun, JP;
Hiroki Nakamura, Osakasayama, JP;
Toshihiko Fukushima, Nara, JP;
Toshifumi Yoshikawa, Nara, JP;
Takahiro Takimoto, Tenri, JP;
Isamu Ohkubo, Kashiba, JP;
Masaru Kubo, Kitakatsuragi-gun, JP;
Hiroki Nakamura, Osakasayama, JP;
Toshihiko Fukushima, Nara, JP;
Toshifumi Yoshikawa, Nara, JP;
Sharp Kabushiki Kaisha, Osaka, JP;
Abstract
A light receiving element, comprising a semiconductor structure comprising at least a first conductivity type semiconductor layer, a first, second conductivity type semiconductor layer provided on the first conductivity type semiconductor layer in the semiconductor structure, a second, second conductivity type semiconductor layer having an impurity concentration lower than that of the first, second conductivity type semiconductor layer, a second, first conductivity type semiconductor layer provided on the second, second conductivity type semiconductor layer, or a second, first conductivity type semiconductor layer provided within the second, second conductivity type semiconductor layer.