The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 27, 2005
Filed:
Jul. 08, 2003
Yoshiaki Tanida, Kawasaki, JP;
Yoshihiro Sugiyama, Kawasaki, JP;
Yoshiaki Tanida, Kawasaki, JP;
Yoshihiro Sugiyama, Kawasaki, JP;
Fujitsu Limited, Kawasaki, JP;
Abstract
The semiconductor device comprises an intermediate layer formed on a semiconductor substrate, the intermediate layerbeing formed of an oxide containing a first element which is either of a III group element and a V group element, an insulation film formed on the intermediate layer, the insulation film being formed of an oxide of a second element which is the other of the III group element and the V group element, and an electrodeformed on the insulation film. Because the intermediate layer of the oxide containing the first element is formed, even when the gate insulation film is formed of AlOor others, the interface state density can be depressed to be low. Thus, the semiconductor device can have low interface state density and small flat band voltage shift even when AlO, etc. is used as a material of the insulation film.