The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 27, 2005
Filed:
Sep. 21, 2004
John J. Ellis-monaghan, Grand Isle, VT (US);
Kirk D. Peterson, Jericho, VT (US);
Jeffrey S. Zimmerman, Hinesburg, VT (US);
John J. Ellis-Monaghan, Grand Isle, VT (US);
Kirk D. Peterson, Jericho, VT (US);
Jeffrey S. Zimmerman, Hinesburg, VT (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A halo implant method for forming halo regions of at least first and second transistors formed on a same semiconductor substrate. The first transistor comprises a first gate region disposed between first and second semiconductor regions. The second transistor comprises a second gate region disposed between third and fourth semiconductor regions. The method comprises the steps of, in turn, halo-implanting each of the first, second, third, and fourth semiconductor regions, with the other three semiconductor regions being masked, in a projected direction which (i) is essentially perpendicular to the direction of the respective gate region and (ii) points from the halo-implanted semiconductor region to the respective gate region.