The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 27, 2005

Filed:

Mar. 11, 2004
Applicant:

Samuel D. Tonomura, Rancho Palos Verdes, CA (US);

Inventor:

Samuel D. Tonomura, Rancho Palos Verdes, CA (US);

Assignee:

Raytheon Company, Waltham, MA (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H05K009/00 ;
U.S. Cl.
CPC ...
Abstract

A hybrid assembly having improved cross talk characteristics includes an electromagnetic band gap (EBG) layer on a substrate having an upper surface and a lower surface and a semiconductor structure (MMIC) mounted above the EBG layer. A plurality of stars made of an EBG material are preferably printed, or deposited, on the upper surface. The EBG material has slow wave characteristics. The plurality of stars tessellates the upper surface between conductive paths. Each of the stars has a center section formed from a regular polygon, the center section having projections extending from the center section. The projections and the center section form a periphery. The periphery engages adjacent stars along the periphery. Stars are separated from adjacent stars by an interspace. Each of the stars is connected to a conductive via, in turn connected to ground potential. A conductive layer at ground potential is electrically continuous with vias used to interconnect all stars forming the EBG layer.


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