The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 27, 2005
Filed:
Dec. 16, 2002
Yong-sun Sohn, Ichon-shi, KR;
Yong-Sun Sohn, Ichon-shi, KR;
Hynix Semiconductor Inc., Ichon-shi, KR;
Abstract
The present invention provides a manufacturing method of a contact for use in a semiconductor device and a manufacturing method of a PMOS device using the same, which can obtain an electrical characteristic of a low contact resistance similar to a mixed implantation ofBFions andBions and reduce a manufacturing cost. The method for forming a contact of a semiconductor device includes: the steps of: forming an insulating layer on a conductive semiconductor layer; forming a contact hole within the insulating layer to expose a portion of the conductive semiconductor layer; forming a plug implantation region by implantingBFions into the exposed conductive semiconductor layer disposed on a bottom of the contact hole; performing an annealing process for activating dopants injected by the implantation ofBFions; and filling the contact hole with a conductive layer.