The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 27, 2005
Filed:
Oct. 08, 2003
Applicant:
Mariko Takayanagi, Kawasaki, JP;
Inventor:
Mariko Takayanagi, Kawasaki, JP;
Assignee:
Kabushiki Kaisha Toshiba, Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L021/8238 ; H01L021/336 ;
U.S. Cl.
CPC ...
Abstract
A semiconductor device comprising a semiconductor substrate and a MOSFET provided on the semiconductor substrate, the MOSFET including a gate insulating film and a gate electrode provided on the gate insulating film, wherein the gate insulating film has a higher dielectric constant in a side contacting the semiconductor substrate than in a side contacting the gate electrode.
Takayanagi, Mariko. (2005). Semiconductor device includes gate insulating film having a high dielectric constant (U.S. Patent No. 6949425). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6949425
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile