The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 27, 2005
Filed:
Jun. 29, 2004
Applicants:
Gobi R. Padmanabhan, Sunnyvale, CA (US);
Visvamohan Yegnashankaran, Redwood City, CA (US);
Inventors:
Gobi R. Padmanabhan, Sunnyvale, CA (US);
Visvamohan Yegnashankaran, Redwood City, CA (US);
Assignee:
National Semiconductor Corporation, Santa Clara, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L021/00 ; H01L021/84 ;
U.S. Cl.
CPC ...
Abstract
A vertical MOS transistor has a very short channel length that is indirectly defined by the thickness of a layer of semiconductor material or the depths of implants. The transistor has a first (source/drain) region formed in a substrate material, a semiconductor region formed on the first region, and a second (source/drain) region formed in the top surface of the semiconductor region. The distance between the first region and the second region defines the channel length of the transistor.