Clad plate for forming interposer for semiconductor device, interposer for semiconductor device, and method of manufacturing them

Abstract

A clad plate for forming an interposer for a semiconductor device which can be manufactured at low cost and has good characteristics, an interposer for a semiconductor device, and a method of manufacturing them. Copper foil materials () forming conductive layers () and nickel plating () forming etching stopper layers () are formed and pressed to form a clad plate () for forming an interposer for a semiconductor device. Thus, a clad plate () for forming an interposer for a semiconductor device is manufactured. The clad plate () is selectively etched to form a columnar conductor (), and an insulating layer () is formed on the copper foil material forming a wiring layer (). A bump () for connection of a semiconductor chip and the wiring layer () are formed on the opposite side to the side on which the columnar conductor () is formed. Thus, an interposer for a semiconductor device is manufactured.