The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 27, 2005
Filed:
Dec. 03, 2002
Seiji Sarayama, Miyagi, JP;
Hirokazu Iwata, Miyagi, JP;
Masahiko Shimada, Miyagi, JP;
Hisanori Yamane, Miyagi, JP;
Masato Aoki, Miyagi, JP;
Seiji Sarayama, Miyagi, JP;
Hirokazu Iwata, Miyagi, JP;
Masahiko Shimada, Miyagi, JP;
Hisanori Yamane, Miyagi, JP;
Masato Aoki, Miyagi, JP;
Ricoh Company, Ltd., Tokyo, JP;
Abstract
A group-III nitride crystal growth method, comprising the steps of: a) preparing a mixed molten liquid of an alkaline metal and a material at least comprising a group-III metal; b) growing a group-III nitride crystal of the group-III metal and nitrogen from the mixed molten liquid and a material at least comprising nitrogen; and c) setting a predetermined crystal growth condition according to a zone defined by a pressure and a temperature in said step b).