The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 20, 2005

Filed:

Jan. 14, 2004
Applicants:

Takao Moriwaki, Tokyo, JP;

Yuji Yamamoto, Hyogo, JP;

Kosei Maemura, Tokyo, JP;

Inventors:

Takao Moriwaki, Tokyo, JP;

Yuji Yamamoto, Hyogo, JP;

Kosei Maemura, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H03F003/04 ;
U.S. Cl.
CPC ...
Abstract

A high-frequency amplifier has an amplifying transistor and a bias circuit that supplies a bias current to the base of the amplifier transistor. The bias circuit has a reference voltage input terminal to which a reference voltage is input from an external source, a first transistor that supplies a bias current to the base of the amplifier transistor in response to the reference voltage, a second transistor whose collector is connected to the connecting point of the first transistor to the base of the amplifying transistor, and whose emitter is grounded, a third transistor that supplies a bias current to the base of the second transistor in response to the reference voltage, and temperature compensation portions connected between the connecting point of the control input terminal to the third transistor and the grounding point.


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