Switching circuit device

Abstract

Since improvement measures are not taken in regard to the electrostatic breakdown voltage, electrostatic breakdown voltages, between the common input terminal IN—first control terminal Ctl-, between the common input terminal IN—second control terminal Ctl-, between the first control terminal Ctl-—the first output terminal OUT, and between the second control terminal Ctl-—the second output terminal OUT, where both ends of gate Schottky junctions of FETs are lead out to the exterior, are low. To solve the problem, the embodiment of the invention provides a switch circuit device, wherein protecting elements are connected by disposing two electrode pads, for connection to a single control terminal, on a chip and positioning the electrode pads near the common input terminal pad I and an output terminal pad Oor O. The electrostatic energies that are applied between the first output terminal OUT—the first control terminal Ctl-, between the common input terminal IN—the first control terminal Ctl-, between the second output terminal OUT—the second control terminal Ctl-, and between the common input terminal IN—the second control terminal Ctl-can be respectively attenuated to the same degree and most efficiently.