The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 20, 2005
Filed:
Jul. 09, 2003
Douglas Brisbin, San Jose, CA (US);
David Tsuei, Sunnyvale, CA (US);
Alexander H. Owens, Los Gatos, CA (US);
Andy Strachan, Los Gatos, CA (US);
Douglas Brisbin, San Jose, CA (US);
David Tsuei, Sunnyvale, CA (US);
Alexander H. Owens, Los Gatos, CA (US);
Andy Strachan, Los Gatos, CA (US);
National Semiconductor Corporation, Santa Clara, CA (US);
Abstract
An LDMOS structure which provides for reduced hot carrier effects. The reduction in hot carrier effects is achieved by increasing the size of the drain region of the LDMOS relative to the size of the source region. The larger size of the drain region reduces the concentration of electrons entering the drain region. This reduction in the concentration of electrons reduces the number of impact ionizations, which in turn reduces the hot carrier effects. The overall performance of the LDMOS is improved by reducing the hot carrier effects.