The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 20, 2005
Filed:
Apr. 21, 2004
Applicant:
Takahiro Nakamoto, Tokyo, JP;
Inventor:
Takahiro Nakamoto, Tokyo, JP;
Assignee:
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L031/0304 ;
U.S. Cl.
CPC ...
Abstract
An MESFET is configured wherein a semiconductor layer structure including an i-AlGaAs buffer layer, an n-AlGaAs electron supply layer having an impurity doping density ranging from 1×10cmto 1×10cmand a layer thickness ranging from 1 nm to 10 nm, and an n-GaAs channel layer, all of which are sequentially deposited from the semi-insulating GaAs substrate side, is disposed on the semi-insulating GaAs substrate, a gate electrode is provided on the n-GaAs channel layer, and a source electrode and a drain electrode opposite to each other with the gate electrode interposed therebetween are provided.