The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 20, 2005
Filed:
Apr. 01, 2003
Paul H. Townsend, Iii, Midland, MI (US);
Kenneth L. Foster, Midland, MI (US);
Paul H. Townsend, III, Midland, MI (US);
Kenneth L. Foster, Midland, MI (US);
Dow Global Technologies Inc., Midland, MI (US);
Abstract
A method of forming at least a partial air gap within a semiconducting device and the resulting devices, said method comprising the steps of: (a) depositing a sacrificial polymeric composition in one or more layers of the device during its formation; (b) coating the device with one or more layers of a relatively non-porous, organic, polymeric, insulating dielectric material (hardmask) having a density less than 2.2 g/cm; and (c) decomposing the sacrificial polymeric composition such that the decomposition products permeate at least partially through the one or more hardmask layers, thereby forming at least a partial air gap within the device.