The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 20, 2005
Filed:
Feb. 13, 2003
Masakiyo Matsumura, Kamakura, JP;
Mikihiko Nishitani, Nara, JP;
Yoshinobu Kimura, Tokyo, JP;
Masayuki Jyumonji, Yokohama, JP;
Yukio Taniguchi, Yokohama, JP;
Masato Hiramatsu, Tokyo, JP;
Fumiki Nakano, Kamakura, JP;
Masakiyo Matsumura, Kamakura, JP;
Mikihiko Nishitani, Nara, JP;
Yoshinobu Kimura, Tokyo, JP;
Masayuki Jyumonji, Yokohama, JP;
Yukio Taniguchi, Yokohama, JP;
Masato Hiramatsu, Tokyo, JP;
Fumiki Nakano, Kamakura, JP;
Kabushiki Kaisha Ekisho Sentan Gijutsu Kaihatsu Center, Yokohama, JP;
Abstract
Methods for forming a single crystal semiconductor thin film layer from a non-single crystal layer includes directing a light source having a homogenized intensity distribution and a modulated amplitude towards the non-single crystal layer, and relatively moving the light with respect to the layer wherein the amplitude of the conditioned light is preferably increased in the direction of relative motion of the light to the layer. Preferred methods also include multiple light exposures in overlapping series to form ribbon-shaped single crystal regions, and providing a low temperature point in the semiconductor layer to generate a starting location for single crystalization.