The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 20, 2005
Filed:
May. 02, 2002
Soon-yong Kweon, Ichon-shi, KR;
Soon-Yong Kweon, Ichon-shi, KR;
Hynix Semiconductor Inc., Ichon-shi, KR;
Abstract
A method for fabricating a high-density ferroelectric memory device is disclosed in which a plug can be heat-treated at a high temperature. The method includes the following. Forming an interlayer dielectric film on a semiconductor substrate after forming a transistor on the semiconductor substrate. The interlayer dielectric film is selectively etched to form a contact hole. A plug and a barrier film are buried into the contact hole. A conductive film is formed on the interlayer dielectric film including the barrier film. The conductive film is selectively etched to make both ends of the conductive film inclined so as to form a capping layer for capping the barrier film. There are sequentially formed a lower electrode, a ferroelectric thin film and an upper electrode upon the interlayer dielectric film (which includes the capping layer).