The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 20, 2005
Filed:
Nov. 24, 2004
Applicants:
Hiu Fung Ip, San Jose, CA (US);
Ellick MA, San Jose, CA (US);
Ping Huang, Shanhai, CN;
Inventors:
Assignee:
BCD Semiconductor Manufacturing Limited, Grand Cayman, KY;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L021/8234 ;
U.S. Cl.
CPC ...
Abstract
The present invention relates to an integrated circuit manufacturing method for producing a double-diffused metal-oxide-semiconductor (DMOS), which utilizes a removable spacer method with a self-aligned channel to manufacture an improved DMOS with a reduced parasitic capacitance, and a high-resistance DMOS for a high power application can thus be fabricated also. Via the present invention, a faster switch with more usable operating frequencies can be achieved.