The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 20, 2005

Filed:

Mar. 12, 2004
Applicant:

Mark Gottfried, Manville, NJ (US);

Inventor:

Mark Gottfried, Manville, NJ (US);

Assignee:

Emcore Corporation, Somerset, NJ (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L021/00 ; H01L021/28 ;
U.S. Cl.
CPC ...
Abstract

A method of making an electrode on a semiconductor device including depositing metal on a top surface of a semiconductor structure, and defining a first region of the semiconductor structure for a first electrode by forming a mask over the metal. The mask has an opening so that the first region is covered by the mask and a second region of the structure is aligned with the opening in the mask. Metal aligned with the opening in the mask in the second region is then removed to form a first electrode overlying the first region of the semiconductor structure, and also revealing the top surface of the semiconductor structure in the second region. Material is then removed from the semiconductor structure aligned with opening in the second region to form a second electrode surface for a second electrode.


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