The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 13, 2005
Filed:
Apr. 26, 2004
Takashi Miida, Kanagawa, JP;
Takashi Miida, Kanagawa, JP;
Innotech Corporation, Kanagawa, JP;
Abstract
A transistor includes p-type semiconductor () including a projection () having a pair of side walls () facing each other, a gate insulation layer (), a pair of n-type source/drain regions (BL, BL), tunnel insulation layers (), a pair of floating gates (FG, FG), inter-polycrystalline insulation layers, and a control gate (CG). The root portion of the projection (A), which virtually connects the source/drain regions (BL, BL) with a straight line, is higher in the concentration of the p-type impurity than the other portion. A delete voltage for deleting charges stored in the floating gate (FG) is applied between the control gate (CG) and the source/drain region (BL, BL), so that a delete current flows toward the control gate (CG) or the source/drain region (BL, BL), the charges stored being deleted.