The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 13, 2005
Filed:
Dec. 18, 2002
Susanne Arney, Highland Park, NJ (US);
Arman Gasparyan, New Providence, NJ (US);
Sungho Jin, San Diego, CA (US);
Omar D. López, Summit, NJ (US);
Herbert R. Shea, Washington Township, Bergen County, NJ (US);
Susanne Arney, Highland Park, NJ (US);
Arman Gasparyan, New Providence, NJ (US);
Sungho Jin, San Diego, CA (US);
Omar D. López, Summit, NJ (US);
Herbert R. Shea, Washington Township, Bergen County, NJ (US);
Lucent Technologies Inc., Murray Hill, NJ (US);
Agere Systems Inc., Allentown, PA (US);
Abstract
A charge-dissipation structure is formed within the dielectric of an electrostatically driven device, such as a micro-electro-mechanical systems ('MEMS') device, by ion implantation. Electrical and other properties of the charge-dissipation structure may be controlled by selection of the species, energy, and dose of implanted ions. With appropriate properties, such a charge-dissipation structure can reduce the effect on device operation of mobile charges in or on the dielectric.