The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 13, 2005
Filed:
Sep. 03, 2002
Pierre Viktorovitch, Tassin-la-Demi-Lune, FR;
Jean-louis Leclercq, Morance, FR;
Christian Seassal, Lyons, FR;
Alain Spisser, Lyons, FR;
Michel Garrigues, La Tour de Salvagny, FR;
Pierre Viktorovitch, Tassin-la-Demi-Lune, FR;
Jean-Louis Leclercq, Morance, FR;
Christian Seassal, Lyons, FR;
Alain Spisser, Lyons, FR;
Michel Garrigues, La Tour de Salvagny, FR;
Centre National de la Recherche Scientifique, Paris, FR;
Ecole Centrale de Lyon, Ecully, FR;
Abstract
The invention concerns an optoelectronic device comprising at alteration of at least three semiconductor layers with selected shape, and two air layers. The semiconductor layers having N-type or P-type doping which may differ or not from one layer to the next layer, are separated by spacers whereof the doping is non-intentional (I-type) or intentional (N-type or P-type) to define a PINIP or NIPIN structure with air cavities, and are adapted to be set at selected respective electric potentials. The respective thicknesses and compositions of the layers and the spacers are selected so that the structure has at least an optical transfer function adapted to light to be treated and adjustable in accordance with the selected potentials applied to the semiconductor layers.