The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 13, 2005
Filed:
Jan. 30, 2004
Nathan F. Gardner, Mountain View, CA (US);
Christopher P. Kocot, Palo Alto, CA (US);
Stephen A. Stockman, Morgan Hill, CA (US);
Nathan F. Gardner, Mountain View, CA (US);
Christopher P. Kocot, Palo Alto, CA (US);
Stephen A. Stockman, Morgan Hill, CA (US);
Lumileds Lighting U.S., LLC, San Jose, CA (US);
Abstract
A light-emitting semiconductor device comprises a III-Nitride active region and a III-Nitride layer formed proximate to the active region and having a thickness that exceeds a critical thickness for relaxation of strain in the III-Nitride layer. The III-Nitride layer may be a carrier confinement layer, for example. In another aspect of the invention, a light-emitting semiconductor device comprises a III-Nitride light emitting layer, an InAlGaN (0≦x≦1, 0≦y≦1, x+y≦1), and a spacer layer interposing the light emitting layer and the InAlGaN layer. The spacer layer may advantageously space the InAlGaN layer and any contaminants therein apart from the light emitting layer. The composition of the III-Nitride layer may be advantageously selected to determine a strength of an electric field in the III-Nitride layer and thereby increase the efficiency with which the device emits light.