The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 13, 2005
Filed:
Jun. 30, 2004
Kwang Chul Joo, Kyungki-Do, KR;
Kwang Chul Joo, Kyungki-Do, KR;
Hynix Semiconductor Inc., Kyungki-Do, KR;
Abstract
The present invention relates to a method for manufacturing a flash memory device. A polysilicon layer for a floating gate has a stack structure of a doped polysilicon layer and an undoped polysilicon layer, whereby the polysilicon layer is prevented from being oxidized at the interface of the polysilicon layer and a dielectric layer in the process of forming the dielectric layer or in other subsequent process. Furthermore, an oxidization-resistant property of a polysilicon layer can be further increased by nitrifying the surface of the polysilicon layer for a floating gate before a dielectric layer is formed. Thereby, the interfacial characteristics of the polysilicon layer and the dielectric layer can be improved and the layer quality of the dielectric layer can be improved while preventing the edge of the dielectric layer from becoming thick.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile