The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 06, 2005

Filed:

Aug. 30, 2002
Applicants:

Julian Cheng, San Jose, CA (US);

Chan-long Shieh, Paradise Valley, AZ (US);

M. V. Ramana Murty, Woodland Hills, CA (US);

Hsing-chung Lee, Calabasas, CA (US);

Inventors:

Julian Cheng, San Jose, CA (US);

Chan-Long Shieh, Paradise Valley, AZ (US);

M. V. Ramana Murty, Woodland Hills, CA (US);

Hsing-Chung Lee, Calabasas, CA (US);

Assignee:

JDS Uniphase Corporation, San Jose, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01S005/00 ; H01S003/094 ;
U.S. Cl.
CPC ...
Abstract

Monolithic integrated vertical-cavity surface-emitting laser devices are disclosed including an edge-emitting semiconductor pump laser (PL), an optically-pumped vertical-cavity surface-emitting laser (VCSEL), and a means for deflecting and shaping the output beam of the pump laser to optically excite the VCSEL. The optically-pumped VCSEL structure may be adapted to include a resonant cavity with multiple fixed wavelengths, or a resonance cavity whose wavelength is continuously tunable. Wafer level manufacturing techniques are also disclosed.


Find Patent Forward Citations

Loading…