The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 06, 2005
Filed:
May. 05, 2003
Michihito Ueda, Osaka, JP;
Takashi Ohtsuka, Osaka, JP;
Kiyoyuki Morita, Kyoto, JP;
Matsushita Electric Industrial Co., Ltd., Osaka, JP;
Abstract
A semiconductor device includes: a control-voltage supply unit; an MOS transistor including a gate electrodeand drain and source regionsand; a dielectric capacitor; and a resistor. The dielectric capacitorand the resistorare disposed in parallel and interposed between the gate electrodeand the control-voltage supply unit. With this structure, a charge is accumulated in each of an intermediate electrode of the dielectric capacitorand the gate electrodeupon the application of a voltage, thereby varying a threshold value of the MOS transistor. In this manner, the history of input signals can be stored as a variation in a drain current in the MOS transistor, thus allowing multilevel information to be held.