The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 06, 2005
Filed:
Jan. 06, 2005
Byoung Hwa Lee, Kyungki-do, KR;
Dong Seok Park, Seoul, KR;
Chang Hoon Shim, Kyungki-do, KR;
Sang Soo Park, Kyungki-do, KR;
Min Cheol Park, Kyungki-do, KR;
Byoung Hwa Lee, Kyungki-do, KR;
Dong Seok Park, Seoul, KR;
Chang Hoon Shim, Kyungki-do, KR;
Sang Soo Park, Kyungki-do, KR;
Min Cheol Park, Kyungki-do, KR;
Samsung Electro-Mechanics Co., Ltd., Kyungki-Do, KR;
Abstract
A multilayered chip capacitor including a capacitor main body including a plurality of dielectric layers, which are laminated; at least one pair of first and second internal electrodes, each of which is formed on the corresponding one of the plural dielectric layers and includes at least one lead extended to one end of the corresponding dielectric layer; a plurality of external terminals formed on the outer surface of the capacitor main body, and respectively connected to the first and second internal electrodes through the leads; and at least one opened region, formed through the inner area of each of the first and second internal electrodes, for branching the flow of current so as to increase the offset quantity of parasitic inductances between the first and second internal electrodes.