The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 06, 2005
Filed:
Nov. 12, 2003
Yoshihiro Kizaki, Kasugai, JP;
Osamu Kudo, Kasugai, JP;
Shinya Udo, Kasugai, JP;
Toshihiko Kasai, Kasugai, JP;
Yoshihiro Kizaki, Kasugai, JP;
Osamu Kudo, Kasugai, JP;
Shinya Udo, Kasugai, JP;
Toshihiko Kasai, Kasugai, JP;
Fujitsu Limited, Kawasaki, JP;
Abstract
A bias circuit generates a first voltage at a first node. A second current source generates, according to the first voltage, a power supply current to be supplied to an internal circuit including transistors. A correcting transistor in a correcting circuit supplies the first node with a correcting current generated according to a constant voltage. Because of this, the first voltage is adjusted according to the correcting current. Therefore, the operating speed of the internal circuit is prevented from changing, being dependent on the variation of the threshold voltage and temperature variation of a transistor. As a result, the yield can be improved, independently of the variation of the threshold voltage among semiconductor integrated circuit chips, which occurs in a fabrication process. Further, temperature dependency of the operating speed of the internal circuit can be reduced, which can improve the yield of the semiconductor integrated circuit.