The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 06, 2005
Filed:
Feb. 05, 2003
Masatoshi Arai, Ikoma, JP;
Masatoshi Arai, Ikoma, JP;
Matsushita Electric Industrial Co., Ltd., Osaka, JP;
Abstract
A plurality of impurity diffusion layers working as bit lines are formed in surface portions of a semiconductor substrate, and a plurality of buried insulating films are formed above the plural impurity diffusion layers on the semiconductor substrate. Gate electrodes of memory devices include a plurality of first polysilicon films, which are formed between the buried insulating films with a trapping film formed below and have top faces at substantially the same level as top faces of the buried insulating films, and a second polysilicon film formed over the plural buried insulating films and the plural first polysilicon films for electrically connecting the plural first polysilicon films to one another.