The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 06, 2005
Filed:
Apr. 30, 2003
Kouji Kikuchi, Yokohama, JP;
Kouji Kikuchi, Yokohama, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
A semiconductor device includes a semiconductor substrate having a first major surface and a second major surface, source and drain layers formed in the first major surface, a gate insulating film formed on the first major surface, a gate layer formed on the gate insulating film, a source electrode formed on the first major surface and electrically connected to the source layer, a drain electrode formed on the first major surface, electrically connected to the drain layer, and having a second isolation portion, a gate electrode formed on the first major surface, electrically connected to the gate layer, and having a first isolation portion, a first capacitance adjusting electrode formed on the gate insulating film and having a first capacitance adjusted by the first isolation portion, and a second capacitance adjusting electrode formed on the gate insulating film and having a second capacitance adjusted by the second isolation portion.