The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 06, 2005
Filed:
Jun. 30, 2003
David John Baldwin, Allen, TX (US);
Joseph A. Devore, Richardson, TX (US);
Robert Steinhoff, Dallas, TX (US);
Jonathan Brodsky, Richardson, TX (US);
David John Baldwin, Allen, TX (US);
Joseph A. Devore, Richardson, TX (US);
Robert Steinhoff, Dallas, TX (US);
Jonathan Brodsky, Richardson, TX (US);
Texas Instruments Incorporated, Dallas, TX (US);
Abstract
The present invention includes a MOS device () that has a P-type substrate () and an N-type drain region () formed within the substrate (). An annular N-type source region () generally surrounds the drain region (). The source region () serves as both the source for the MOS device () and a sacrificial collector guard ring for an electrostatic discharge protection circuit. An annular gate region () generally surrounds the drain region () and is electrically insulated from the drain region () and electrically connected to the source region (). An annular P-type bulk region () generally surrounds the source region () and is electrically connected to the source region ().