The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 06, 2005
Filed:
Sep. 19, 2001
Oliver Gehring, Dresden, DE;
Oliver Gehring, Dresden, DE;
Infineon Technology AG, Munich, DE;
Abstract
A semiconductor memory cell includes a semiconductor substrate that defines a trench having trench walls. The semiconductor memory cell also includes a floating gate electrode positioned within the trench and insulated from the trench walls by a first insulation region; a control gate electrode surrounding the trench; and a second insulation layer on the surface of the semiconductor substrate. The semiconductor memory cell further includes a conductive layer positioned on the second insulation layer. The conductive layer includes a channel region positioned above the floating gate electrode. The semiconductor memory cell also includes a source region and a drain region. The source region and the drain region are each formed in the conductive layer. The source region and the drain region are also connected to the channel region.