The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 06, 2005
Filed:
Jun. 23, 2003
Hiroyuki Kiyoku, Anan, JP;
Shuji Nakamura, Anan, JP;
Tokuya Kozaki, Anan, JP;
Naruhito Iwasa, Anan, JP;
Kazuyuki Chocho, Anan, JP;
Hiroyuki Kiyoku, Anan, JP;
Shuji Nakamura, Anan, JP;
Tokuya Kozaki, Anan, JP;
Naruhito Iwasa, Anan, JP;
Kazuyuki Chocho, Anan, JP;
Nichia Chemical Industries, Ltd., Tokushima-Ken, JP;
Abstract
A method of growing a nitride semiconductor crystal which has very few crystal defects and can be used as a substrate is disclosed. This invention includes the step of forming a first selective growth mask on a support member including a dissimilar substrate having a major surface and made of a material different from a nitride semiconductor, the first selective growth mask having a plurality of first windows for selectively exposing the upper surface of the support member, and the step of growing nitride semiconductor portions from the upper surface, of the support member, which is exposed from the windows, by using a gaseous Group 3 element source and a gaseous nitrogen source, until the nitride semiconductor portions grown in the adjacent windows combine with each other on the upper surface of the selective growth mask.