The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 06, 2005
Filed:
Aug. 29, 2003
Applicant:
Masaaki Ikegami, Tokyo, JP;
Inventor:
Masaaki Ikegami, Tokyo, JP;
Assignee:
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L021/44 ;
U.S. Cl.
CPC ...
Abstract
A semiconductor device having stable device characteristics, in which variation in contact resistance between silicon and poly-silicon or between poly-silicon and poly-silicon is reduced. In a cleaning process before forming an upper layer poly-silicon film, a treatment is conducted to form a thin uniform oxide film on the surface of silicon. After forming the upper layer poly-silicon filma removed portion is uniformly formed on the thin uniform oxide film by applying a short time, high temperature annealing treatment.