The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 06, 2005
Filed:
Mar. 28, 2003
Maryam Jahangiri, Sunnyvale, CA (US);
Mira Ben-tzur, Sunnyvale, CA (US);
Maryam Jahangiri, Sunnyvale, CA (US);
Mira Ben-Tzur, Sunnyvale, CA (US);
Cypress Semiconductor Corporation, San Jose, CA (US);
Abstract
In one embodiment, a method of fabricating an integrated circuit includes forming a low-k dielectric layer over metal lines, forming an adhesion layer over the low-k dielectric layer, and forming a capping layer over the adhesion layer. The low-k dielectric may comprise SiLK™ dielectric material, while the capping layer may comprise TEOS. The resulting stack of dielectric materials may be employed in a passivation level to protect the metal lines. For example, a topside layer may be formed over the capping layer.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile