The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 06, 2005
Filed:
Nov. 26, 2003
Jong Han Shin, Seoul, KR;
Sang Ick Lee, Gyeonggi-do, KR;
Jong Han Shin, Seoul, KR;
Sang Ick Lee, Gyeonggi-do, KR;
Hynix Semiconductor Inc., Gyeonggi-do, KR;
Abstract
The present invention discloses method for manufacturing capacitor of semiconductor device wherein a bonding layer is exposed via etch-back process without using a contact hole mask. In accordance with the method of the present invention, an interlayer insulating film, a bonding layer and a hard mask layer are sequentially formed on a semiconductor substrate. The hard mask layer, the bonding layer and the interlayer insulating film are then etched to form a storage electrode contact hole. The storage electrode contact hole is partially filled to form a storage electrode contact plug and the remaining portion is filled with a barrier metal layer pattern. The hard mask layer is then removed and a storage electrode contacting the barrier metal layer pattern is then formed on the bonding layer.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile