The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 06, 2005
Filed:
Feb. 03, 2004
Toshie Kutsunai, Shiga, JP;
Shinichiro Hayashi, Osaka, JP;
Yuji Judai, Kyoto, JP;
Yoshihisa Nagano, Osaka, JP;
Toshie Kutsunai, Shiga, JP;
Shinichiro Hayashi, Osaka, JP;
Yuji Judai, Kyoto, JP;
Yoshihisa Nagano, Osaka, JP;
Matsushita Electric Industrial Co., Ltd., Osaka, JP;
Abstract
A capacitor including a capacitor lower electrode, a capacitor dielectric film of a highly dielectric film or a ferroelectric film and a capacitor upper electrode is formed on a semiconductor substrate. A protection film is formed on the semiconductor substrate so as to cover the capacitor. A first TEOS film having a relatively large water content is formed on the protection film through first TEOS-OCVD where an ozone concentration is relatively low. A second TEOS-Ofilm having a relatively small water content is formed on the first TEOS-Ofilm through second TEOS-OCVD where the ozone concentration is relatively high.