The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 06, 2005

Filed:

Aug. 28, 2002
Applicants:

Syunsuke Satoh, Kakogawa, JP;

Hozumi Nakata, Kakogawa, JP;

Inventors:

Syunsuke Satoh, Kakogawa, JP;

Hozumi Nakata, Kakogawa, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F009/00 ;
U.S. Cl.
CPC ...
Abstract

In a state in which respective portions of a quartz wafer have been masked by a plurality of kinds of mask layers that have respectively different etching rates, the quartz wafer is subjected to an etching process. Since the etching operation is started earlier at a first portion which is masked by the mask layer having a high etching rate, the amount of etching is increased at the first portion. In contrast, the start of the etching operation is delayed at a second portion which is masked by the mask layer having a low etching rate, and the amount of etching is reduced at the second portion. Thus, it becomes possible to form the quartz wafer into a desired shape.


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