The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 6939409 B1

PDF
Full Text
Expired
Date of Patent:
Sep. 06, 2005

Filed:

Dec. 18, 2000
Applicants:

Tokiko Kanayama, Amagasaki, JP;

Hiroaki Kouno, Yawata, JP;

Inventors:

Tokiko Kanayama, Amagasaki, JP;

Hiroaki Kouno, Yawata, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B08B005/00 ;
U.S. Cl.
CPC ...
Abstract

A cleaning method and an etching method for removing, by cleaning grease components and silicon micro pieces hard to remove, used for an apparatus and a carrier for manufacturing a semiconductor wafer or a semiconductor device. Matters to be removed are brought into contact with XeFgas produced by sublimation in a vacuum atmosphere to decompose and gasify the grease components and to remove silicon pieces by etching. If a trace of residual water is left in the vacuum atmosphere before the cleaning, the HO reacts with XeF, so that HF is produced. Therefore, for example, the native oxide SiOformed on the silicon pieces can be removed, and XeFcan directly react with silicon, thereby enabling etching. The cleaning and etching speeds are extremely accelerated.


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