The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 30, 2005
Filed:
Jan. 08, 2003
Din-ping Tsai, Taipei, TW;
Yu-hsuan Lin, Taipei, TW;
Hsun-hao Chang, Taipei, TW;
National Taiwan University, Taipei, TW;
Abstract
This invention is a write-once near-field optical medium using a zinc oxide nano-structured thin film as the localized near-field optical interaction layer. This write-once near-field optical medium is a multi-layered body at least comprising: (a) a substrate of transparent material; (b) a first protective and spacer layer formed on one surface of the substrate, which is made of transparent dielectric material; (c) a zinc oxide nano-structured thin film which is capable of causing localized near-field optical interactions; (d) a second protective and spacer layer formed on the localized near-field optical interaction layer, which is also made of transparent dielectric material; (e) a write-once recording layer; (f) a third protective and spacer layer formed on the write-once recording layer, which is also made of transparent dielectric material. Ultra-high density near-field optical recording can be achieved by the localized near-field optical interactions of the zinc-oxide (ZnO) nano-structured thin film that is in the near-field region of the write-once recording layer.