The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 30, 2005
Filed:
Feb. 05, 2003
Hiroshi Moriya, Chiyoda, JP;
Kisho Ashida, Chiyoda, JP;
Toshinori Hirataka, Yokohama, JP;
Mamoru Morita, Hiratsuka, JP;
Hiroshi Moriya, Chiyoda, JP;
Kisho Ashida, Chiyoda, JP;
Toshinori Hirataka, Yokohama, JP;
Mamoru Morita, Hiratsuka, JP;
Hitachi, Ltd., Tokyo, JP;
OpNext Japan, Inc., Yokohama, JP;
Abstract
A semiconductor laser device which ensures high yield, high reliability and high power output by reduction in tensile strain in its active region for improvement in the COD level. The device comprises: a semiconductor crystal-growing portion having an active layer for conversion of electric energy into light energy and a mesa structure protruding on the one side; and an electrode film which is electrically connected with the top face of the mesa structure. The electrode film has a tensile strain and stretches sideward from the mesa structure. In the device, there is a strain control film which is polymerized with the electrode film part stretching sideward from the mesa structure and has a compressive stress.