The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 30, 2005

Filed:

Jul. 10, 2003
Applicants:

Sheung Hee Park, Pleasanton, CA (US);

Wing Han Leung, Sunnyvale, CA (US);

Richard M. Fastow, Cupertino, CA (US);

Inventors:

Sheung Hee Park, Pleasanton, CA (US);

Wing Han Leung, Sunnyvale, CA (US);

Richard M. Fastow, Cupertino, CA (US);

Assignee:

Advanced Micro Devices, Inc., Sunnyvale, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C016/04 ;
U.S. Cl.
CPC ...
Abstract

A method of programming a memory device comprises applying a first programming voltage to one of a plurality of wordlines, corresponding to a cell to be programmed. The first programming voltage is substantially equal to the desired threshold voltage. A second programming voltage is also applied to one of a plurality of bitlines, corresponding to the cell to be programmed. The second programming voltage gradually increases from a low level toward a high level. The first programming voltage and second programming voltage are removed when the corresponding bitline current begins to decrease.


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